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junction capacitance中文是什么意思

  • 結(jié)電容(半導(dǎo)體二極管或三極管)

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  • 例句與用法
  • Measuring methods of photocell - junction capacitance
    光電池測(cè)量方法結(jié)電容
  • Furthermore , the parameters related to junction capacitance were extracted in this paper . 3
    此外,論文中還提取了bsim3模型交流參數(shù)中的結(jié)電容相關(guān)參數(shù)。
  • The auxiliary switch conducts when the two main switch turn off , and it also operates at zcs conditions . this switch not only helps the main switches achieve zvs , furthermore , it eliminates the oscillation between the transformer leakage inductance and the junction capacitance of two switches
    輔助開關(guān)管為主開關(guān)管實(shí)現(xiàn)zvs創(chuàng)造了條件,同時(shí)輔助開關(guān)管在主開關(guān)管關(guān)閉期間實(shí)現(xiàn)zcs導(dǎo)通,大大減輕了變壓器漏感和主開關(guān)管結(jié)電容之間的振蕩。
  • A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs . the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit , such as transistor output capacitance , diode junction capacitance and transformer leakage inductance , which can eliminate parasitic oscillation in the converter
    它的優(yōu)點(diǎn)在于諧振電容吸收了開關(guān)管和續(xù)流二極管的結(jié)電容,諧振電感吸收了變壓器的漏感,使得開關(guān)管和續(xù)流二極管都能在軟開關(guān)的條件下完成導(dǎo)通和關(guān)斷過(guò)程,消除了電路中的寄生振蕩。
  • Simox soi wafers produced by ion implant processes were used in this experiment . the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures . the soi transistors have been the key devices for achieving the low voltage operation and low power consumption , because of the small junction capacitance , the small s - factor , and the small substrate bias effect
    這三種模型分別是:第一,將傳統(tǒng)的mos電容結(jié)構(gòu)應(yīng)用到soi材料上來(lái)進(jìn)行c - v , i - v測(cè)試,分析計(jì)算soi材料的重要電學(xué)性能參數(shù);第二種,針對(duì)soi材料的特殊結(jié)構(gòu),為了適應(yīng)生產(chǎn)線上對(duì)無(wú)損soi園片進(jìn)行電學(xué)性能測(cè)試的要求,應(yīng)用mosos結(jié)構(gòu)來(lái)對(duì)soi材料進(jìn)行電學(xué)性能表征。
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